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Deposition of Ultrathin Films of Niobium Pentoxide onto n+-Si (111) Using Atomic Layer Deposition

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Ultra-thin niobium oxide on silicon is needed to form a passivation layer between the silanes and metallic silicon in silane linked perovskite – silicon solar cells. Atomic Layer Deposition (ALD) serves as a potential method of depositing thin films because of its extreme repeatability and general ease of use. Deposition of ALD films can be controlled by cycles, temperature, pressure, and substrate conditions. X-ray photoelectron spectroscopy and an overlayer model were used to determine film thickness on silicon wafers. Although an ideal set of parameters were not obtained, 20 cycle runs generally yielded consistent film thickness at a running flow rate of 5 sccm and a temperature of 150 ºC. Issues with substrate contamination yielded problems with gaining consistent results. Future work will involve exploring more cycle counts and ways to mitigate contamination.

  • This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
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  • 64861
  • E-project-042822-003254
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  • 2022
Date created
  • 2022-04-28
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