This project prepared for Unitrode Integrated Circuits Corporation discusses the characterization and optimization of a plasma enhanced chemical vapor deposited (PECVD) borophosphosilicate glass (BPSG) dielectric film. Through the use of UV ellipsometry, stress analysis, FTIR and Raman spectroscopy, and surface charge analysis, the film and its underlayer were thoroughly characterized to explain unwanted field threshold voltage drops presumably caused by excess charge. Also, characterization of B(OH)3 a BPSG thin film defect was completed resulting in the suggestion of a reaction for the formation of B(OH)3.

• This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.

Creator

• Blanchette, Craig P.

Publisher

• Worcester Polytechnic Institute

Identifier

• 99C018M

Advisor

• Pavlik, James W.

Year

• 1999

Date created

• 1999-01-01

Resource type

• Major Qualifying Project

Major

• Chemistry

Rights statement

• In Copyright