Tailored Synthesis of Bi2S3 Thin Film to Enhance Optoelectronic Performance
PúblicoMetal sulfides with moderate band gaps are desired for efficient generation of electricity or fuels from sunlight. Bi2S3, with a band gap of 1.3 eV, has been commonly synthesized by the successive ionic layer adsorption and reaction to produce nanocrystalline films. Annealing of the solution-processed Bi2S3 nanocrystals has been attempted at low temperatures, which may not improve crystallinity. Here, we report a highly crystalline and phase-pure Bi2S3 thin film photoelectrode synthesized by high-temperature annealing of the solution-processed nanocrystalline film in a sulfur vapor environment. The sulfur-annealed Bi2S3 thin film exhibits significantly enhanced light absorption and photoexcited carrier lifetime compared to the un-annealed film.
- This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
- Creator
- Colaboradores
- Publisher
- Identifier
- E-project-042617-154056
- Award
- Advisor
- Year
- 2017
- Date created
- 2017-04-26
- Resource type
- Major
- Rights statement
- Última modificación
- 2023-09-20
Las relaciones
- En Collection:
Elementos
Elementos
Miniatura | Título | Visibilidad | Embargo Release Date | Acciones |
---|---|---|---|---|
|
2017.04.26_-_Bi2S3_MQP_Report_Final.pdf | Público | Descargar |
Permanent link to this page: https://digital.wpi.edu/show/j3860819s